Controlled synthesis of transition metal dichalcogenide thin films for electronic applications
Controlled synthesis of transition metal dichalcogenide thin films for electronic applications
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DOI：
10.1016/j.apsusc.2014.01.103
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发表时间：
2014-04-01
影响因子：
6.7
通讯作者：
Duesberg, Georg S.
中科院分区：
文献类型：
--
作者：
Gatensby, Riley;McEvoy, Niall;Duesberg, Georg S.
二维过渡金属二硫属化合物（TMD）在纳米电子学、纳米光子学和传感领域具有广阔的应用前景。特别地，钼（Mo）和钨（W）的硫化物和硒化物引起了人们的兴趣，因为它们具有带隙，这对于集成到电子器件结构中是重要的。然而，高质量TMD薄膜的低通量合成迄今为止阻碍了器件的发展，因此需要可扩展的方法来充分利用其优异的性能。在这项工作中，提出了一种简便的路线，以制造设备从二硫化钼和WS 2，通过气相硫化预沉积的金属层生长。在大面积上生产高度均匀的TMD膜。通过改变预沉积金属层的厚度，可以实现对TMD薄膜厚度的精细控制，可以控制到几层。薄膜的特点是拉曼光谱，电子显微镜和X-射线光电子能谱。最薄的膜表现出光致发光，单层二硫化钼膜预测，由于在两个维度上的限制。通过使用荫罩光刻，生产出具有明确几何形状的薄膜，随后与标准微处理工艺流程集成并进行电气表征。以这种方式，生产了基于MoS 2的传感器，其对NH3的灵敏度低至400 ppb。我们的设备制造是通用的，并适用于未来的纳米（光）电子设备，因为它是可再生的，成本效益和可扩展到晶圆级。(C)2014爱思唯尔有限公司版权所有。
Two dimensional transition metal dichalcogenides (TMDs) are exciting materials for future applications in nanoelectronics, nanophotonics and sensing. In particular, sulfides and selenides of molybdenum (Mo) and tungsten (W) have attracted interest as they possess a band gap, which is important for integration into electronic device structures. However, the low throughput synthesis of high quality TMD thin films has thus far hindered the development of devices, and so a scalable method is required to fully exploit their exceptional properties. Within this work a facile route to the manufacture of devices from MoS2 and WS2, grown by vapour phase sulfurisation of pre-deposited metal layers, is presented. Highly homogenous TMD films are produced over large areas. Fine control over TMD film thickness, down to a few layers, is achieved by modifying the thickness of the pre-deposited metal layer. The films are characterised by Raman spectroscopy, electron microscopy and X-ray photoelectron spectroscopy. The thinnest films exhibit photoluminescence, as predicted for monolayer MoS2 films, due to confinement in two dimensions. By using shadow mask lithography, films with well-defined geometries were produced and subsequently integrated with standard microprocessing process flows and electrically characterised. In this way, MoS2 based sensors were produced, displaying sensitivity to NH3 down to 400 ppb. Our device manufacture is versatile, and is adaptable for future nanoscale (opto-) electronic devices as it is reproducible, cost effective and scalable up to wafer scale. (C) 2014 Elsevier B.V. All rights reserved.