Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition
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Hf源、氧化剂和NH3/Ar等离子体对原子层沉积制备HfAlOx薄膜性能的影响
DOI：
10.1143/jjap.43.4129
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发表时间：
2004
影响因子：
1.5
通讯作者：
H. Kitajima
中科院分区：
文献类型：
--
作者：
T. Kawahara;K. Torii;R. Mitsuhashi;A. Muto;A. Horiuchi;H. Ito;H. Kitajima
研究了 Hf 源、氧化剂和 NH3/Ar 等离子体对原子层沉积 (ALD) 制备的 HfO2 和 HfAlOx 薄膜性能的影响。使用四(乙基甲基氨基)铪：Hf(NEtMe)4 (TEMAHf)作为铪源避免了与四氯化铪(HfCl4)相关的问题，例如吞吐量差和产生大量颗粒。该来源还可以有效降低残留氯 (Cl) 的水平。然而，残余碳（C）的水平增加了。发现水解比使用 O3 的氧化更有效地从 TEMAHf 和/或三甲基铝 (TMA) 中去除配体；使用O3形成的薄膜比使用H2O形成的薄膜含有更高水平的C，导致场效应晶体管（FET）性能恶化，例如亚阈值摆幅和迁移率。通过 TEMAHf 和 NH3/Ar 等离子体的结合，成功降低了残余杂质 (C+Cl) 的总含量，从而改善了 FET 性能，特别是减少了栅极漏电流。
The effect of Hf sources, oxidizing agents, and NH3/Ar plasma on the properties of HfO2 and HfAlOx films prepared by atomic layer deposition (ALD) have been investigated. The use of tetrakis(ethylmethylamino)hafnium: Hf(NEtMe)4 (TEMAHf) as a source of hafnium has avoided the problems associated with hafnium tetrachloride (HfCl4), such as poor throughput and the generation of a large number of particles. This source has also been effective in reducing the level of residual chlorine (Cl). However, the level of residual carbon (C) increased. Hydrolysis was found to be more effective than oxidation using O3 in removing ligands from the TEMAHf and/or trimethylaluminum (TMA); the film formed using O3 contained a higher level of C than that using H2O, resulting in the deterioration in field-effect transistor (FET) properties, such as the subthreshold swings and the mobilities. The total levels of residual impurities (C+Cl) were successfully reduced through the combination of TEMAHf and NH3/Ar plasma, leading to improvements in FET properties, particularly in the reduction of the gate leakage current.