Silicon carbide power devices - current developments and potential applications
Silicon carbide power devices - current developments and potential applications
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碳化硅功率器件——当前发展和潜在应用
DOI：
10.1109/epe.2005.219736
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
R. Rupp
中科院分区：
文献类型：
--
作者：
P. Friedrichs;R. Rupp
碳化硅功率器件被认为将在未来十年内彻底改变功率半导体业务的关键领域。目前，它们的成本状况必须得到改善，以扩大其市场潜力。在这个方向上的第一步是提供高质量的3”基础材料，以及到2006年提供4”晶圆的前景。展望不久的将来，器件链中的下一个合乎逻辑的步骤应该是SiC开关器件。从能源系统中的高压应用到低压功率开关的巨大市场，即使在100 V以下的阻断电压范围内，SiC也被认为是满足对功率密度日益增长的需求的一个潜在候选者。SiC功率开关的一个重要应用领域是混合动力电动汽车，其要求高功率密度电子器件以及恶劣的环境条件。它显示了SiC二极管和硅IGBT的正确组合如何能够在使用混合动力甚至全电驱动的新一代汽车中使用的系统性能方面提供巨大的改进。本文综述了SiCED和英飞凌在SiC功率开关和二极管方面的发展。此外，还概述了推动SiC功率开关发展的一些潜在应用。最后，对SiC功率器件的近期和远期前景进行了展望
Silicon carbide power devices are believed to revolutionize key sectors of the power semiconductor business in the next decade. At the moment, their cost positions have to be improved in order to enlarge their market potential. A first step in this direction is the availability of a high quality 3" base material as well as the outlook for having 4" wafers available by 2006. Looking into the near future, the next logical step in the device chain should be a SiC switching device. The potential ranges from high voltage applications in energy systems down to the huge market for low voltage power switches, where even in the blocking voltage range below 100 V SiC is believed to be one potential candidate for fulfilling the increasing demands on power density. One important field of applications of SiC power switches can be the hybrid electric vehicle with its demands on high power density electronics as well as the harsh environmental conditions. It is shown how the right combination of SiC diodes and silicon IGBT's can offer enormous improvements in the performance of systems intended to be used in new generation cars using hybrid or even full electric drives. The paper gives an overview about the developments of SiC power switches and diodes at SiCED and Infineon. In addition, some potential applications serving as drivers for the SiC power switch development is sketched. Finally, an outlook to near and long term perspectives for SiC power devices is given