High-Precision Half-life Measurements for the Superallowed β+ Emitter 14O
High-Precision Half-life Measurements for the Superallowed β+ Emitter 14O
复制标题
超允许 β+ 发射体 14O 的高精度半衰期测量
DOI：
10.1051/epjconf/20146605012
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
C. Unsworth
中科院分区：
文献类型：
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作者：
A. Laffoley;C. Svensson;C. Andreoiu;R. Austin;G. Ball;B. Blank;H. Bouzomita;D. Cross;A. D. Varela;R. Dunlop;P. Finlay;A. Garnsworthy;P. Garrett;J. Giovinazzo;G. Grinyer;G. Hackman;B. Hadinia;D. Jamieson;S. Ketelhut;K. Leach;J. Leslie;E. Tardiff;J. Thomas;C. Unsworth
在TRIUMF的同位素分离器和加速器装置上，通过同时进行γ和β计数实验，测定了超允许费米β +发射体14 O的半衰期。在8 π谱仪中心注入14O样品后，用20个高纯锗（HPGe）探测器探测子体14N第一激发态发射的2313keV γ射线，进行γ计数测量。使用位于植入部位正后方的快速塑料闪烁体进行同步β计数实验。结果，T ½（γ）= 70：632 ± 0：094 s和T ½（β）= 70：610 ± 0：030 s，彼此一致，并且与之前的8次测量一起，建立了T ½ = 70：619 ± 0：011 s的14 O半衰期的新平均值，降低的χ 2为0.99。
The half-life of 14 O, a superallowed Fermi β + emitter, has been determined via simultaneous γ and β counting experiments at TRIUMF’s Isotope Separator and Accelerator facility. Following the implantation of 14 O samples at the center of the 8 π spectrometer, a γ counting measurement was performed by detecting the 2313 keV γ -rays emitted from the first excited state of the daughter 14 N using 20 high-purity germanium (HPGe) detectors. A simultaneous β counting experiment was performed using a fast plastic scintillator positioned directly behind the implantation site. The results, T ½ ( γ ) = 70:632 ± 0:094 s and T ½ ( β ) = 70:610 ± 0:030 s, are consistent with one another and, together with eight previous measurements, establish a new average for the 14 O half-life of T ½ = 70:619 ± 0:011 s with a reduced χ 2 of 0.99.