Bias Voltage Controlled Positive Magnetoresistance of Fe0.05−C0.95/Si Heterostructures
Bias Voltage Controlled Positive Magnetoresistance of Fe0.05−C0.95/Si Heterostructures
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Fe0.05−C0.95/Si 异质结构的偏置电压控制正磁阻
DOI：
10.1088/0256-307x/26/8/087301
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Yuan Jun
中科院分区：
文献类型：
--
作者：
Wu Li;Zhang Xiao;Z. Xin;Wang Cai;Gao Xi;Tan Xin;Yuan Jun
通过脉冲激光沉积（PLD）在n型硅衬底上沉积厚度约100 nm的Fe掺杂非晶碳薄膜，并且在正向偏压下电流垂直于平面的配置下观察到这些Fe掺杂非晶碳/n-Si异质结构的正磁阻（MR）。在 40−120 K 温度范围内观察到两个 MR 峰值，并且正 MR 随施加的偏置电压而变化。这种偏置电压控制的磁流变可能与磁场控制的冻结效应和通过铁掺杂碳膜中的深俘获态的复合有关。
Fe-doped amorphous carbon films of about 100 nm in thickness are deposited on n-type silicon substrates by pulsed laser deposition (PLD), and positive magnetoresistance (MR) is observed for these Fe-doped amorphous carbon/n-Si heterostructures under current-perpendicular-to-plane configuration at forward bias. Two MR peaks are observed in the temperature range 40−120 K and the positive MR varies with applied bias voltage. This bias voltage controlled MR may be related to the magnetic-field-controlled freeze out effect and recombination through the deep trapping states in the Fe-doped carbon films.
影响因子：
64.8
作者：
Delmo, Michael P.;Yamamoto, Shinpei;Kobayashi, Kensuke
通讯作者：
Kobayashi, Kensuke