Single‐crystal diamond plate liftoff achieved by ion implantation and subsequent annealing
Single‐crystal diamond plate liftoff achieved by ion implantation and subsequent annealing
复制标题
通过离子注入和随后的退火实现单晶金刚石板剥离
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
R. Markunas
中科院分区：
文献类型：
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作者：
N. Parikh;J. Hunn;E. McGucken;M. Swanson;C. White;R. Rudder;D. Malta;J. Posthill;R. Markunas
我们描述了一种从块状或同质外延金刚石晶体中去除薄的大面积金刚石片的新方法。该方法包括离子注入步骤和随后的选择性蚀刻过程。碳或氧离子的高能 (4-5 MeV) 注入会形成一层轮廓分明的受损金刚石，该金刚石被埋藏在表面以下的受控深度处。对于 C 注入，该层通过真空退火进行石墨化，然后在酸溶液中或在氧气中加热至 550–600°C 进行蚀刻。该过程成功地将金刚石板从石墨层上方剥离。对于合适剂量（3×1017 cm−2 或更大）的 O 注入，通过在真空或流动氧气中退火来实现剥离。在这种情况下，蚀刻石墨层所需的O也通过注入在内部供应。这种剥离方法与成熟的同质外延生长工艺相结合，对于制造大面积单晶直径具有巨大的潜力。
We describe a new method for removing thin, large area sheets of diamond from bulk or homoepitaxial diamond crystals. This method consists of an ion implantation step, followed by a selective etching procedure. High energy (4–5 MeV) implantation of carbon or oxygen ions creates a well‐defined layer of damaged diamond that is buried at a controlled depth below the surface. For C implantations, this layer is graphitized by annealing in vacuum, and then etched in either an acid solution, or by heating at 550–600 °C in oxygen. This process successfully lifts off the diamond plate above the graphite layer. For O implantations of a suitable dose (3×1017 cm−2 or greater), the liftoff is achieved by annealing in vacuum or flowing oxygen. In this case, the O required for etching of the graphitic layer is also supplied internally by the implantation. This liftoff method, combined with well‐established homoepitaxial growth processes, has considerable potential for the fabrication of large area single crystalline dia...