Interface engineering of cBN films deposited on silicon substrates
Interface engineering of cBN films deposited on silicon substrates
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DOI：
10.1063/1.1583153
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发表时间：
2003-06
影响因子：
3.2
通讯作者：
Hangsheng Yang;C. Iwamoto;T. Yoshida
中科院分区：
文献类型：
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作者：
Hangsheng Yang;C. Iwamoto;T. Yoshida
我们可以通过研究纳米结构，化学成分和非晶层的键合状态来确定沉积立方氮化硼薄膜所需的衬底预处理条件，所述非晶层不可避免地在离子辅助化学气相沉积中生长立方氮化硼之前生长。非晶层由原生Si氧化物层和由B、N、Si和10-20 at. %的氧。然而，通过衬底预处理，在20 mTorr H2气氛中1200 K加热120 min，Si衬底表面的结晶度可以在整个去除原生氧化物层的过程中得到保留，并且乱层BN被揭示为直接在Si衬底上生长。此外，我们可以减少乱层BN层的厚度小于3 nm，并显着提高结合强度。非晶层的形成是由两个因素引起的：自然氧化层和离子轰击。
We could determine the substrate pretreatment conditions required for the deposition of cubic boron nitride films without an interfacial amorphous layer by investigating nanostructures, chemical composition, and bonding states of the amorphous layer, which inevitably grew prior to the growth of cubic BN in ion-assisted chemical vapor deposition. The amorphous layer was composed of a native Si oxide layer and a complex oxide layer consisting of B, N, Si, and 10–20 at. % oxygen. However, by the substrate pretreatment, 1200 K heating in 20 mTorr H2 atmosphere for 120 min, the crystallinity of the Si substrate surface could be retained throughout the removal of the native oxide layer, and turbostratic BN was revealed to grow directly on the Si substrate. In addition, we could reduce the thickness of the turbostratic BN layer to less than 3 nm, and increase the adhesion strength markedly. The formation of the amorphous layer was found to be caused by two factors: the native oxide layer and the ion bombardment ...