Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition
Study of Graphene Growth by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol: Influence of Gas Flow Rate on Graphitic Material Deposition
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DOI：
10.1143/jjap.50.06ge12
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发表时间：
2011-06-01
影响因子：
1.5
通讯作者：
Hibino, Hiroki
中科院分区：
文献类型：
--
作者：
Maeda, Fumihiko;Hibino, Hiroki
为了了解使用裂解乙醇通过气体源分子束外延生长石墨烯期间发生的事情，并深入了解如何优化这种生长方法以生产高质量石墨烯，我们研究了气体流速对生长速率的影响。从芯层的光电子强度，我们发现，沉积速率随气体供应速率的增加而降低。我们引入了生长效率的光电子强度和环境压力的生长系统中的乙醇供应，并发现效率随着供应率的增加而下降。为了理解这种现象，我们将裂解的乙醇供应到先前沉积在衬底上的石墨材料，并且发现石墨材料从衬底表面去除。这些结果表明，在裂解乙醇的供应下，石墨材料的沉积和蚀刻同时发生。这种竞争反应、沉积和蚀刻的过程导致极低的生长速率，并且在我们的生长条件下反应几乎平衡。(C)2011日本应用物理学会
To understand what is going on during graphene growth by gas-source molecular beam epitaxy with cracked ethanol and to gain insights into how to optimize this growth method to produce high-quality graphene, we investigated the influence of gas flow rate on the growth rate. From the core-level photoelectron intensities, we found that the deposition rate decreases with increasing gas supply rate. We introduced growth efficiency using the photoelectron intensities and environmental pressure of the growth system during ethanol supply and found that the efficiency decreases with increasing supply rate. To understand this phenomenon, we supplied the cracked ethanol to the previously deposited graphitic material on the substrate and found that the graphitic material was removed from the substrate surface. These results indicate that, under the supply of cracked ethanol, deposition and etching of graphitic material occur simultaneously. This process of competitive reactions, deposition and etching, results in the extremely low growth rate, and the reactions are almost balanced at our growth condition. (C) 2011 The Japan Society of Applied Physics