Optimizing the Back Contact of Kesterites and Perovskites: Band Edge Design and Defect Engineering in Molybdenum Chalcogenides
Optimizing the Back Contact of Kesterites and Perovskites: Band Edge Design and Defect Engineering in Molybdenum Chalcogenides
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DOI:
10.1002/adsu.202100457
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发表时间:
2022-01
影响因子:
7.1
通讯作者:
Huiwen Xiang;Jinping Zhang;Hanzhen Liang;Ruizhen Zhu;Chengyan Liu;Yu Jia
中科院分区:
文献类型:
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作者:
Huiwen Xiang;Jinping Zhang;Hanzhen Liang;Ruizhen Zhu;Chengyan Liu;Yu Jia
Back contacts, as an important part of solar cell devices, play a critical role in efficient separation of carriers and reduction of interfacial recombination. Here, by analyzing interfacial band alignment, thickness and defect properties of back contacts, a design principle for back contacts is proposed to properly accommodate the interrelated factors of short‐circuit current (Jsc), open‐circuit voltage (Voc), series resistance (Rs), and nonradiative recombination centers (NRCs) at the same time. A preferred back contact should have (i) a high valance band maximum (VBM) and (ii) a low Fermi level relative to absorber to drive hole extraction and block electron leakage, (iii) a thin design under the premise of p+‐type characteristic to effectively reduce Rs, which also ensures a wide depletion region on the absorber side to promote hole collection, and (iv) no additional deep‐level defects as interfacial NRCs. Taking molybdenum chalcogenide as example, p+‐type MoSe2/MoS2 realized by group VB element doping satisfies the design principles and is promising as an excellent back contact for kesterite/perovskite solar cells. This study gives theoretical guidance for designing an ideal back contact and shows how to improve the photovoltaic performance of solar cells by interfacial optimization.