All-inorganic field effect transistors fabricated by printing
All-inorganic field effect transistors fabricated by printing
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DOI：
10.1126/science.286.5440.746
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发表时间：
1999-10-22
期刊：
影响因子：
56.9
通讯作者：
Jacobson, JM
中科院分区：
文献类型：
--
作者：
Ridley, BA;Nivi, B;Jacobson, JM
硒化镉纳米晶体的溶液被用于印刷场效应迁移率高达1平方厘米/伏秒的无机薄膜晶体管。这种迁移率是一个数量级大于印刷有机晶体管的报道。场效应是通过开发一种合成方法来实现的，该方法产生了尺寸小于2纳米的离散尺寸的纳米晶体，该纳米晶体不含紧密结合的有机封端基团。所得的纳米晶体溶液表现出低温晶粒生长，其形成包含数百个纳米晶体的单晶区域。该过程提出了在塑料基板上实现廉价、全印刷、高质量无机逻辑的途径。
A solution of cadmium selenide nanocrystals was used to print inorganic thin-film transistors with field effect mobilities up to 1 square centimeter per volt second. This mobility is an order of magnitude larger than those reported for printed organic transistors. A field effect was achieved by developing a synthesis that yielded discretely sized nanocrystals less than 2 nanometers in size, which were free of intimately bound organic capping groups. The resulting nanocrystal solution exhibited low-temperature grain growth, which formed single crystal areas encompassing hundreds of nanocrystals, This process suggests a route to inexpensive, all-printed, high-quality inorganic logic on plastic substrates.