Material and electrical characterization of carbon-doped Ta2O5 films for embedded dynamic random access memory applications
Material and electrical characterization of carbon-doped Ta2O5 films for embedded dynamic random access memory applications
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用于嵌入式动态随机存取存储器应用的碳掺杂 Ta2O5 薄膜的材料和电气特性
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
C. D. W. Jones
中科院分区：
文献类型：
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作者：
K. Chu;Jane P. Chang;M. Steigerwald;R. Fleming;R. Opila;D. Lang;R. B. Dover;C. D. W. Jones
本工作是一个系统的研究碳纳入Ta 2 O 5和它的影响的材料和电学性能的Ta 2 O 5，一个有前途的替代氧化硅在嵌入式动态随机存取存储器的应用。使用脉冲直流反应和射频磁控溅射Ta 2 O 5在氩/氧/二氧化碳等离子体中进行，我们有条理地掺杂的Ta 2 O 5薄膜与碳。在70 nm厚的Ta 2 O 5薄膜中，最佳碳掺杂量（0.8-1.4 at. %）在+3 MV/cm时将漏电流降低到10−8 A/cm 2，与在类似条件下生长的未掺杂Ta 2 O 5薄膜中的漏电流10−4 A/cm 2相比，减少了四个数量级。 这一发现表明，碳掺杂可以进一步改善在最佳浓度下的介电泄漏特性。X射线光电子能谱分析表明，碳酸盐（碳键合到三个氧）在这些电改进的碳掺杂的薄膜中的存在。高分辨率透射电镜分析
This work is a systematic study of carbon incorporation in Ta2O5 and its effect on the material and electrical properties of Ta2O5, a promising replacement for silicon oxide in embedded dynamic random access memory applications. Using pulsed-dc reactive and rf-magnetron sputtering of Ta2O5 performed in an argon/oxygen/carbon-dioxide plasma, we have methodically doped the Ta2O5 films with carbon. In thick (70 nm) Ta2O5 films, an optimal amount (0.8–1.4 at. %) of carbon doping reduced the leakage current to 10−8 A/cm2 at +3 MV/cm, a four orders of magnitude reduction compared to a leakage current of 10−4 A/cm2 in an undoped Ta2O5 film grown in similar conditions without CO2 in the plasma. This finding suggests that carbon doping can further improve the dielectric leakage property at an optimal concentration. X-ray Photoemission Spectroscopy analysis showed the presence of carbonate (carbon bonded to three oxygen) in these electrically improved carbon-doped films. Analysis by high-resolution transmission ele...