Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)
Light-emitting nanostructures formed by intense, ultrafast electronic excitation in silicon (100)
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通过硅中强烈、超快的电子激发形成的发光纳米结构 (100)
DOI：
10.1063/1.1413958
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发表时间：
2001
影响因子：
4
通讯作者：
D. Schneider
中科院分区：
文献类型：
--
作者：
A. Hamza;M. W. Newman;P. Thielen;Howard W. H. Lee;T. Schenkel;J. Mcdonald;D. Schneider
清洁的硅(10 0)-(2×1)表面强烈的超快电子激发导致了嵌入在硅中的硅纳米结构的形成，该结构在∼5 6 0 nm波长(∼2 eV带隙)处发光。用慢速、高电荷态离子(如Xe44+和Au53+)照射硅表面，产生电子激发。对于硅纳米结构来说，在发光中观察到激子特征是特别不寻常的。温度依赖性和发射的三重态-单重态分裂的测量有力地支持了激子归属。
The intense, ultrafast electronic excitation of clean silicon (100)–(2×1) surfaces leads to the formation of silicon nanostructures embedded in silicon, which photoluminescence at ∼560 nm wavelength (∼2 eV band gap). The silicon surfaces were irradiated with slow, highly charged ions (e.g., Xe44+ and Au53+) to produce the electronic excitation. The observation of excitonic features in the luminescence is particularly unusual for silicon nanostructures. The temperature dependence and the measurement of the triplet–singlet splitting of the emission strongly support the excitonic assignment.