A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy
A study of lateral Schottky contacts in WSe2 and MoS2 field effect transistors using scanning photocurrent microscopy
复制标题
使用扫描光电流显微镜研究 WSe2 和 MoS2 场效应晶体管的横向肖特基接触
DOI：
10.1039/c5nr04592d
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发表时间：
2015-01-01
期刊：
影响因子：
6.7
通讯作者：
Wang, Jiannong
中科院分区：
文献类型：
--
作者：
Yi, Ya;Wu, Changming;Wang, Jiannong
在金属/半导体界面处形成的肖特基接触总是对场效应晶体管（FET）的性能有很大影响。在这里，我们报告了二维（2D）过渡金属二硫属化物（TMDC）FET器件的肖特基接触的实验研究。我们使用扫描光电流显微镜（SPCM）直接探测在金属/2D-TMDC界面的平面内横向肖特基耗尽区的空间分布。激光入射位置依赖性和栅极电压可调的短路光电流的极性和幅度揭示了面内肖特基耗尽区的存在，该耗尽区沿着沟道横向延伸远离金属接触边缘。该横向耗尽区长度估计为约几微米，并且可以通过栅极和漏极-源极偏置来有效地调谐。我们的研究结果巩固了横向肖特基耗尽区在2D TMDC光电器件的光响应的重要性。
Schottky contacts, formed at metal/semiconductor interfaces, always have a large impact on the performance of field-effect transistors (FETs). Here, we report the experimental studies of Schottky contacts in two-dimensional (2D) transition metal dichalcogenide (TMDC) FET devices. We use scanning photocurrent microscopy (SPCM) to directly probe the spatial distribution of the in-plane lateral Schottky depletion regions at the metal/2D-TMDC interfaces. The laser incident position dependent and the gate voltage tunable polarity and magnitude of the short-circuit photocurrent reveal the existence of the in-plane Schottky depletion region laterally extending away from the metal contact edges along the channel. This lateral depletion region length is estimated to be around several microns and can be effectively tuned by the gate and drain-source biases. Our results solidify the importance of lateral Schottky depletion regions in the photoresponse of 2D TMDC optoelectronic devices.