Organic Thin-Film Transistors with Low-Temperature AlN Film as Gate Insulator
Organic Thin-Film Transistors with Low-Temperature AlN Film as Gate Insulator
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以低温AlN薄膜作为栅绝缘体的有机薄膜晶体管
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
J. Hwang
中科院分区：
文献类型：
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作者：
H. Zan;Kuo;Chien;Pu;Kuo;J. Hwang
RF-ICP溅射的AlN膜被用作并五苯基有机薄膜晶体管TFT中的栅极绝缘体。当AlN薄膜的介电击穿场强大于5 MV/cm，相对介电常数为7时，TFT具有低的工作电压、低的亚阈值摆幅（0.4V/decade 6）和高的开/关电流比（10）。通过调整AlN溅射工艺，发现降低工艺温度可以获得表面粗糙度为2A的AlN薄膜。这种原子级光滑的介电表面导致大的并五苯颗粒的生长，并改善漏电流和场效应迁移率。© 2006 The Electrochemical Society。DOI：10.1149/1.2372227保留所有权利。Mandarin pt于2006年3月22日提交;修订稿于2006年8月29日收到。2006年11月1日电子版。
RF-ICP sputtered AlN film was used as the gate insulator in pentacene-based organic thin-film transistors TFTs . With thedielectric breakdown field larger than 5 MV/cm and the relative electrical permittivity as 7 in the AlN film, the proposed TFTsexhibit low operation voltage, low subthreshold swing 0.4 V/decade 6and high on/off current ratio 10 . By adjusting theAlN sputtering process, it was found that smooth morphology of AlN film surface roughness 2A can be obtained by loweringdown the process temperature. This atomically smooth dielectric surface leads to the growth of large pentacene grains andimproves the leakage current and also the field effect mobility.© 2006 The Electrochemical Society. DOI: 10.1149/1.2372227 All rights reserved.Manuscript submitted March 22, 2006; revised manuscript received August 29, 2006. Available electronically November 1, 2006.