Low-temperature silicon epitaxy by low-energy bias sputtering
Low-temperature silicon epitaxy by low-energy bias sputtering
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低能偏压溅射低温硅外延
DOI：
10.1063/1.99914
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发表时间：
1988
期刊：
影响因子：
--
通讯作者：
H. Iwabuchi
中科院分区：
文献类型：
--
作者：
T. Ohmi;Kiyohiko Matsudo;T. Shibata;T. Ichikawa;H. Iwabuchi
在低能量下的偏压溅射，即，与典型的晶体原子间结合能相当，已用于控制薄膜生长的动力学。发现溅射沉积的硅膜的晶体结构被入射在衬底上的离子的能量急剧改变。结果，在320-350 °C这样的低温下实现了在（100）硅衬底上形成高质量的外延硅膜。同时，还证明了外延层的低温杂质掺杂。此外，低能量偏压溅射工艺可以在极低的温度下进行非常有效的基板表面清洁，而不会对基板造成任何损坏。
Bias sputtering at low energies, i.e., comparable to typical crystal interatomic binding energies, has been utilized to control the kinetics of thin‐film growth. It was found that the crystallographic structures of sputter‐deposited silicon films are drastically changed by the energy of ions incident at the substrate. As a result, formation of high quality epitaxial silicon films on (100) silicon substrates has been realized at such low temperatures as 320–350 °C. At the same time, low‐temperature impurity doping of the epitaxial layer has been also demonstrated. Furthermore, the low‐energy bias sputtering process has made it possible to perform very effective substrate surface cleaning at extremely low temperatures without introducing any damage to the substrate.