Vibrational properties of elemental amorphous semiconductors

Vibrational properties of elemental amorphous semiconductors
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元素非晶半导体的振动特性

DOI：
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发表时间：
1977
期刊：
影响因子：
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通讯作者：
R. Alben
R. Alben
中科院分区：
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文献类型：
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作者：
D. Beeman;R. Alben

文献摘要

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摘要本文给出并讨论了代表单质非晶半导体的较大模型结构的态振动密度、红外光谱和拉曼光谱的计算结果。包括四配位（类锗）、三配位（类砷）和两配位（类硒）材料的模型，在可能的情况下，我们将结果与实验进行了比较，并讨论了简单模型可以重现真实材料行为的限制。
Abstract Results of calculations of vibrational densities of states and of infrared and Raman spectra for relatively large model structures representing elemental amorphous semiconductors are presented and discussed. Models for four-coordinated (germanium-like), three-coordinated (arsenic-like), and two-coordinated (selenium-like) materials are included and, where possible, we compared the results with experiment and discuss the limits within which the simple models can be expected to reproduce the behaviours of real materials.