The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves
The effect of film and interface structure on the transport properties of Heusler based current-perpendicular-to-plane spin valves
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DOI：
10.1063/1.3600792
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发表时间：
2011-06
影响因子：
4
通讯作者：
V. Lazarov;Kenta Yoshida;J. Sato;P. Hasnip;M. Oogane;A. Hirohata;Y. Ando
中科院分区：
文献类型：
--
作者：
V. Lazarov;Kenta Yoshida;J. Sato;P. Hasnip;M. Oogane;A. Hirohata;Y. Ando
我们提出了Co2MnSi和Co2FeMnSi Heusler电流垂直自旋阀（CPP-SVs）的输运性质与用像差校正电子显微镜分辨的界面原子结构之间的直接联系。Co2FeMnSi电极为L21结构，但其与CoSi间隔层的界面是无序的。与co2femnsi电极相比，co2mnsi电极与银间隔层具有突变界面，尽管它们的有序度不是完全的L21。Co2MnSi-SV的磁电阻比Co2FeMnSi-SV的磁电阻提高了两个数量级以上，表明原子界面有序对Heusler cpp - sv磁电阻的增强至关重要。
We present direct link between the transport properties of Co2MnSi and Co2FeMnSi Heusler based current-perpendicular-to-plane spin valves (CPP-SVs) and interface atomic structures resolved by aberration-corrected electron microscopy. The structure of the Co2FeMnSi electrodes is L21 but their interface with the CoSi spacer is disordered. In contrast to the Co2FeMnSi-electrodes, the Co2MnSi-electrodes have abrupt interfaces with the Ag spacer though their ordering is not fully L21. The magnetoresistance of the Co2MnSi-SV is over two orders of magnitude better than those of Co2FeMnSi-SV, demonstrating that the atomic interface ordering is crucial for the enhancement of the magnetoresistance in the Heusler CPP-SVs.