Electron and hole energy levels in InAs self‐assembled quantum dots
Electron and hole energy levels in InAs self‐assembled quantum dots
复制标题
InAs自组装量子点中的电子和空穴能级
DOI：
10.1063/1.113361
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发表时间：
1995
影响因子：
4
通讯作者：
P. Petroff
中科院分区：
文献类型：
--
作者：
G. Medeiros;D. Leonard;P. Petroff
电容谱用于确定嵌入GaAs中的InAs自组装量子点中电子和空穴的允许能级。使用这种技术，相对于它们各自的能带最小值的GaAs中的电子和空穴状态的相对能量进行测量。这允许构建与先前观察到的光致发光数据良好相关的这些量子点的能级图。通过调整器件的几何形状，揭示了电子基态的精细结构，并归因于库仑充电效应。
Capacitance spectroscopy is used to determine the allowed energy levels for electrons and holes in InAs self‐assembled quantum dots embedded in GaAs. Using this technique, the relative energy of the electron and hole states is measured with respect to their respective energy band minima in the GaAs. This allows the construction of an energy level diagram for these quantum dots which correlates well with previously observed photoluminescence data. By tuning the device geometry, a fine structure in the electron ground state is revealed and attributed to Coulomb charging effects.