Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films
Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films
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区域熔化再结晶硅薄膜中亚晶界和缺陷轨迹的表征和夹带
DOI：
10.1063/1.337360
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发表时间：
1986
影响因子：
3.2
通讯作者：
Chenson Chen
中科院分区：
文献类型：
--
作者：
M. Geis;Henry I. Smith;Chenson Chen
我们研究了区熔再结晶Si薄膜中亚边界和缺陷痕迹的形貌和晶体学角度不连续。这些子边界和缺陷痕迹起源于面形凝固前沿的内角，可分为七种类型。有证据表明，由于温度梯度引起的面内应力在引起此类缺陷中起主要作用。描述了用于夹带子边界和缺陷跟踪的各种方案。
We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone‐melting‐recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in‐plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.