Properties of ScxAl1-xN (x = 0.27) thin films on sapphire and silicon substrates upon high temperature loading
Properties of ScxAl1-xN (x = 0.27) thin films on sapphire and silicon substrates upon high temperature loading
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蓝宝石和硅衬底上的 ScxAl1-xN (x = 0.27) 薄膜在高温负载下的性能
DOI：
10.1007/s00542-015-2798-7
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
U. Schmid
中科院分区：
文献类型：
--
作者：
P. Mayrhofer;P. Persson;A. Bittner;U. Schmid
氮化钪铝薄膜（ScxAl 1-xN）由于其压电常数比纯AlN有显著提高，在微机电系统（MEMS）中得到了越来越多的关注。本工作提供了一个全面的研究热退火对ScxAl 1-xN（x = 27%）薄膜合成通过直流磁控溅射沉积在名义上不加热的硅和蓝宝石衬底。与“沉积态”相比，通过基于X射线衍射和透射电子显微镜的分析，观察到具有混合晶体取向的膜在退火至1000 °C时增加的c轴取向和晶体质量。此外，Si上ScxAl 1-xN的压电系数d33在提高的退火温度下显示出增加的值。然而，改进的压电性能伴随着增加的漏电流和损耗角正切值。
Scandium Aluminum Nitride thin films (ScxAl1-xN) are attracting more and more attention for micro-electromechanical systems (MEMS) because of significantly increased piezoelectric constants compared to pure AlN. This work provides a comprehensive study of thermal annealing effects on ScxAl1-xN (x = 27 %) films synthesized via DC magnetron sputter deposition at nominally unheated Silicon and Sapphire substrates. Compared to the “as deposited” state increasing c-axis orientation and crystalline quality upon annealing up to 1000 °C of films with mixed crystallographic orientation is observed via X-ray diffraction and transmission electron microscopy based analyses. Also the piezoelectric coefficientd33of ScxAl1-xN on Si shows increasing values at enhanced annealing temperatures. However, the improved piezoelectric properties are accompanied by both increased leakage currents and loss tangent values.