Electron transport and localization in HgCdTe metal–insulator semiconductor field effect transistors
Electron transport and localization in HgCdTe metal–insulator semiconductor field effect transistors
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DOI：
10.1116/1.575492
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发表时间：
1988-07
期刊：
影响因子：
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通讯作者：
E. Palm;W. Szott;P. Kobiela;W. Kirk;R. Schiebel;M. Reed
中科院分区：
文献类型：
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作者：
E. Palm;W. Szott;P. Kobiela;W. Kirk;R. Schiebel;M. Reed
对碲镉汞金属-绝缘体半导体场效应晶体管的磁输运测量显示出与从自由电子气到局域化的过渡有关的效应。随着栅极电压的降低，磁电阻表现出从经典的二次行为到显著的弱局域行为的连续变化。磁电阻也显示出一个不对称的组件，增加的栅极电压降低。此外，在特定的低栅极电压下，电阻发生离散变化。普遍的电导行为的证据进行了讨论。提出了一个物理模型，归因于这些影响的扩展电子状态的过渡到本地化的状态在各个区域的设备。
Magnetotransport measurements on HgCdTe metal–insulator semiconductor field effect transistors have been found to show effects related to the transition from a free electron gas to localization. The magnetoresistance displayed a continuous change from classical quadratic behavior to prominent weak‐localized behavior as the gate voltage was reduced. The magnetoresistance also displayed an asymmetric component that increased as the gate voltage was lowered. In addition, discrete changes in the resistance occurred at specific low gate voltages. Evidence for universal conductance behavior is discussed. A physical model is presented, attributing these effects to the transition of extended electronic states into localized states in various regions of the device.