Correlation of a generation-recombination center with a deep level trap in GaN
Correlation of a generation-recombination center with a deep level trap in GaN
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GaN 中生成复合中心与深能级陷阱的相关性
DOI：
10.1063/1.4914393
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发表时间：
2015
影响因子：
4
通讯作者：
S. Chua
中科院分区：
文献类型：
--
作者：
X. Nguyen;K. Lin;Z. Zhang;B. McSkimming;A. Arehart;J. Speck;S. Ringel;E. Fitzgerald;S. Chua
我们报告了对产生重组噪声的深层陷阱中心的识别。通过深能级瞬态光谱 (DLTS) 和噪声光谱测量在蓝宝石上通过 MOCVD 生长的 n-GaN 外延层。 DLTS 在 Ec − 0.26 eV、Ec − 0.59 eV 和 Ec − 0.71 eV 处发现了 3 个有据可查的深能级。噪声光谱在Ec − 0.65 ±0.1 eV处确定了一个生成复合中心，在300 K时复合寿命为65 μs。该水平被认为与DLTS测量的Ec − 0.59 eV处的水平相同，因为它们具有相似的陷阱密度和捕获截面。该结果表明，某些深能级会导致 GaN 材料中噪声的产生。
We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at Ec − 0.26 eV, Ec − 0.59 eV, and Ec − 0.71 eV. The noise spectroscopy identified a generation recombination centre at Ec − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at Ec − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.