High-uniformity centimeter-wide Si etching method for MEMS devices with large opening elements
High-uniformity centimeter-wide Si etching method for MEMS devices with large opening elements
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DOI：
10.7567/jjap.57.04fc03
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发表时间：
2018-04-01
影响因子：
1.5
通讯作者：
Mita, Yoshio
中科院分区：
文献类型：
--
作者：
Okamoto, Yuki;Tohyama, Yukiya;Mita, Yoshio
我们提出了一种补偿网格图案填充方法，以实现高度均匀的晶圆深度蚀刻（超过数百微米）与大面积开口（超过厘米）。网孔直径在大蚀刻区域的中心和边缘之间逐渐变化。使用这样的设计，取决于侧壁距离的蚀刻深度分布（称为局部加载效应）反向补偿超过厘米级的蚀刻深度分布，称为全局或管芯（芯片）内尺度加载效应。仅具有测试结构图案的单个DRIE为微机电系统（MEMS）设计者提供了与网格开口尺寸以及与芯片边缘的距离相关的蚀刻深度，并且设计者仅需设置开口尺寸以便在整个芯片上获得均匀的蚀刻深度。这种方法在无法进行工艺优化时非常有用，例如在铸造服务使用标准条件和短周转时间原型制作的情况下。为了证明这一点，使用现有DRIE条件成功制造了需要超过1 cm（2）背面蚀刻的大型MEMS反射镜。(C)2018日本应用物理学会。
We propose a compensated mesh pattern filling method to achieve highly uniform wafer depth etching (over hundreds of microns) with a large-area opening (over centimeter). The mesh opening diameter is gradually changed between the center and the edge of a large etching area. Using such a design, the etching depth distribution depending on sidewall distance (known as the local loading effect) inversely compensates for the over-centimeter-scale etching depth distribution, known as the global or within-die(chip)-scale loading effect. Only a single DRIE with test structure patterns provides a micro-electromechanical systems (MEMS) designer with the etched depth dependence on the mesh opening size as well as on the distance from the chip edge, and the designer only has to set the opening size so as to obtain a uniform etching depth over the entire chip. This method is useful when process optimization cannot be performed, such as in the cases of using standard conditions for a foundry service and of short turn-around-time prototyping. To demonstrate, a large MEMS mirror that needed over 1 cm(2) of backside etching was successfully fabricated using as-is-provided DRIE conditions. (C) 2018 The Japan Society of Applied Physics.