Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
Proton irradiation of CdTe thin film photovoltaics deposited on cerium-doped space glass
复制标题
沉积在掺铈太空玻璃上的 CdTe 薄膜光伏电池的质子辐照
DOI：
10.1002/pip.2923
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Lamb D
中科院分区：
文献类型：
--
作者：
Lamb D
空间光电子学由多结（III-V）技术主导。然而，新兴应用将需要具有高比功率（kW/kg）、装载和部署灵活性以及比当前III-V技术成本低得多的太阳能电池阵列。这项研究证明了将薄膜CdTe直接沉积到辐射-硬盖板玻璃上，该盖板玻璃通常层压到部署在太空中的任何太阳能电池上。用0.5-MeV能量和不同注量的质子辐照四个CdTe样品，其中9个限定的接触装置面积为0.25 cm 2。在最低能量密度1 × 1012 cm −2时，太阳能电池的相对效率为95%。质子注量增加到1 × 1013 cm − 2和1 × 1014 cm − 2，太阳能电池的效率分别降低到82%和4%。在1 × 1013 cm −2的注量下，载流子浓度降低了一个数量级。太阳能电池电容模拟器（SCAPS）的建模得到了很好的拟合，从浅受主浓度的减少，而没有变化的深陷阱缺陷浓度。更高度照射的设备导致在掩埋结特性的外部量子效率，表明受体掺杂的进一步恶化。这是由质子吸收形成的间隙H+的补偿来解释的。1 × 1014 cm − 2通量器件的退火使效率从辐照前的4%提高到73%，表明补偿是可逆的。通过退火快速恢复的CdTe证明了对质子的辐射硬度远远优于传统的多结III-V太阳能电池的上级。
Space photovoltaics is dominated by multi‐junction (III‐V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III‐V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation‐hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm2, were irradiated with protons of 0.5‐MeV energy and varying fluences. At the lowest fluence, 1 × 1012cm−2, the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 1013cm−2and then 1 × 1014cm−2decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 1013cm−2, carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H+formed by the proton absorption. An anneal of the 1 × 1014cm−2fluence devices gave an efficiency increase from 4% to 73% of the pre‐irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi‐junction III‐V solar cells.