Empirical Interatomic Potentials for Nitride Compound Semiconductors
Empirical Interatomic Potentials for Nitride Compound Semiconductors
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氮化物半导体的经验原子间势
DOI：
10.1143/jjap.37.l574
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
T. Ito
确定了氮化铝、氮化镓和氮化铟等氮化物半导体的经验原子间相互作用势。这些经验势的多功能性证实了AlN，GaN和InN的弹性常数的计算，并通过计算各种单层超晶格的过剩能量。结果比较有利的实验和经验与现有的结果。氮化物半导体的这些经验势与半导体文献中已经存在的那些一样准确。
Empirical interatomic potentials are determined for nitride compound semiconductors such as AlN, GaN and InN. The versatility of these empirical potentials is confirmed by the calculation of elastic constants for AlN, GaN and InN, and by the calculation of excess energies for various monolayer superlattices. The results compare favorably with available results experimentally and empirically. These empirical potentials for nitride compound semiconductors are as accurate as those already existing in the literature for semiconductors.