Broadband Millimeter-Wave LNAs (47–77 GHz and 70–140 GHz) Using a T-Type Matching Topology
Broadband Millimeter-Wave LNAs (47–77 GHz and 70–140 GHz) Using a T-Type Matching Topology
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DOI：
10.1109/jssc.2013.2265500
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发表时间：
2013-06
影响因子：
5.4
通讯作者：
Gang Liu;H. Schumacher
中科院分区：
文献类型：
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作者：
Gang Liu;H. Schumacher
本文介绍了两种采用0.25 μm和0.13 μm SiGe BiCMOS工艺实现的宽带毫米波低噪声放大器的设计和特性。两种电路均采用T型匹配拓扑结构，以实现宽带宽（V波段LNA为47-77 GHz，W/F波段LNA为70-140 GHz）。两种LNA的实测最大增益均为23 dB。V波段LNA的噪声系数（NF）在50 ~ 75 GHz范围内低于7.2 dB，W/F波段LNA的噪声系数在78 ~ 110 GHz范围内低于7 dB。两个LNA均为差分电路，消耗52/54 mW直流功率。据作者所知，这两种LNA在相应的频带中实现了最宽的带宽，具有非常有竞争力的增益和NF。
This paper presents the design and characterization of two broadband millimeter-wave LNAs realized in 0.25- μm and 0.13- μm SiGe BiCMOS technologies. Both circuits adopt a T-type matching topology to achieve the wide bandwidth (47-77 GHz for the V-band LNA and 70-140 GHz for the W/F-band LNA). The measured maximum gain is about 23 dB for both LNAs. The measured noise figure (NF) is below 7.2 dB (from 50 to 75 GHz) for the V-band LNA and below 7 dB (from 78 to 110 GHz) for the W/F-band LNA. Both LNAs are differential circuits and consume 52/54 mW dc power. To the best of the authors' knowledge, both LNAs achieve the widest bandwidth in corresponding frequency bands with very competitive gain and NF.