Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon
Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon
复制标题
富氧高纯硅中双空位退火和双空位氧形成的动力学
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
B. Svensson
中科院分区：
文献类型：
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作者：
M. Mikelsen;E. Monakhov;G. Alfieri;B. S. Avset;B. Svensson
本文详细研究了从游离态V2到游离态氧- V2O配合物转变的热动力学，并得到了活化能Ea。用15 MeV的电子辐照了掺杂510 - 12 cm 3、氧含量2 - 310 - 17 cm 3的n型扩散氧化浮区硅DOFZ-Si样品。采用深能级瞬态光谱法对电活性缺陷进行了等温退火研究。由于V2的退火和V2O的形成，在205°C - 285°C范围内的热处理都显示出单负和双负距离水平的变化。通过研究该过程的温度依赖速率，发现退火V2和生成V2O的活化能均为1.3 eV。这个值归因于V2的迁移，结果强烈支持V2在迁移过程中被间隙氧原子捕获的模型。此外，由于V2的损失与V2O的增长呈密切的一对一比例关系，该过程的效率很高。最后，发现V2的扩散系数指数前因子dv20在3±1.510 3 cm 2 /s范围内，这与V2在Si中扩散的简单理论模型非常吻合。
In this work the thermal kinetics of the transformation from the divacancy V2 to the divacancy-oxygen V2O complex has been studied in detail, and activation energies, Ea, have been obtained. Diffusion oxygenated float-zone silicon DOFZ-Si samples of n-type with a doping of 510 12 cm 3 and oxygen content of 2‐310 17 cm 3 have been irradiated with 15 MeV electrons. Isothermal annealing studies of electrically active defects have been performed by means of deep-level transient spectroscopy. Heat treatments at temperatures in the range 205 °C‐285 °C have all shown a shift in the singly negative and doubly negative divacancy levels, due to the annealing of V2 and the formation of V2O. By studying the temperature-dependent rate of this process which exhibits first order kinetics, it has been found that both the annealing V2 and the formation of V2O have activation energies of 1.3 eV. This value is ascribed to migration of V2, and the results favor strongly a model where V2 is trapped by interstitial oxygen atoms during migration. In addition, the process takes place with a high efficiency since the loss of V2 and the growth of V2O display a close one-to-one proportionality. Finally, it has been found that the diffusivity pre-exponential factor, DV2 0 , for V 2 is in the range 3±1.510 3 cm 2 /s, which agrees well with a simple theoretical model of V2 diffusion in Si.