InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
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DOI：
10.1063/1.4875535
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发表时间：
2014-05-14
影响因子：
3.2
通讯作者：
Heyns, Marc M.
中科院分区：
文献类型：
--
作者：
Smets, Quentin;Verreck, Devin;Heyns, Marc M.
人们对III-V隧道场效应晶体管(FET)做出了很有希望的预测，但带-带隧道模型中使用的参数仍然存在不确定性。因此，本文对两个模拟器进行了标定：第一个模拟器使用基于凯恩公式的半经典隧道模型，第二个模拟器是用包络函数形式实现的量子力学模拟器。用几个不同本征区厚度的p+/本征/n+二极管对In0.53Ga0.47As进行了校准。通过SIMS和电容-电压测量确定了掺杂剂的分布。误差条的使用基于测量技术中的统计和系统不确定度。所得参数与理论预测值吻合较好，验证了半经典模型和量子力学模型。最后，应用该模型对In0.53Ga0.47As n线和p线TFET的输入特性进行了预测，与MOSFET相比，n线TFET表现出了与MOSFET相当的性能。(C)2014 AIP出版有限责任公司。
Promising predictions are made for III-V tunnel-field-effect transistor (FET), but there is still uncertainty on the parameters used in the band-to-band tunneling models. Therefore, two simulators are calibrated in this paper; the first one uses a semi-classical tunneling model based on Kane's formalism, and the second one is a quantum mechanical simulator implemented with an envelope function formalism. The calibration is done for In0.53Ga0.47As using several p+/intrinsic/n+ diodes with different intrinsic region thicknesses. The dopant profile is determined by SIMS and capacitance-voltage measurements. Error bars are used based on statistical and systematic uncertainties in the measurement techniques. The obtained parameters are in close agreement with theoretically predicted values and validate the semi-classical and quantum mechanical models. Finally, the models are applied to predict the input characteristics of In0.53Ga0.47As n- and p-lineTFET, with the n-lineTFET showing competitive performance compared to MOSFET. (C) 2014 AIP Publishing LLC.