Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3
Determination of band diagram for a p-n junction between Mott insulator LaMnO3 and band insulator Nb:SrTiO3
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DOI：
10.1063/1.4908570
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发表时间：
2015-02
影响因子：
4
通讯作者：
M. Kitamura;Masaki Kobayashi;E. Sakai;R. Takahashi;M. Lippmaa;K. Horiba;H. Fujioka;H. Kumigashira
中科院分区：
文献类型：
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作者：
M. Kitamura;Masaki Kobayashi;E. Sakai;R. Takahashi;M. Lippmaa;K. Horiba;H. Fujioka;H. Kumigashira
本文报道了用X射线光电子能谱研究了具有“p型载流子”的Mott绝缘体LaMnO_3和n型半导体Nb掺杂SrTiO_3（Nb：STO）之间的外延p-n结的能带图。通过改变Nb：STO中的施主浓度从0.1at. %至1.0 at. %时，Nb：STO侧的内建电势（Vbn）的值从0.55 ± 0.05eV降低到0.25 ± 0.05eV。在传统的p-n结模型的框架中很好地描述了Vbn的调制。这些结果表明，可以使用组成氧化物的输运性质来预测和设计钙钛矿氧化物p-n结的特征，而无论其强相关的电子性质如何。
The authors report on the band diagram of epitaxial p-n junctions between the Mott insulator with “p-type carriers” LaMnO3 and the n-type semiconductor Nb-doped SrTiO3 (Nb:STO) using x-ray photoemission spectroscopy. By changing the donor concentration in Nb:STO from 0.1 at. % to 1.0 at. %, the value of the built-in potential for the Nb:STO side (Vbn) is reduced from 0.55 ± 0.05 eV to 0.25 ± 0.05 eV. The modulation of Vbn is well described in the framework of the conventional p-n junction model. These results suggest that the characteristics of perovskite oxide p-n junctions can be predicted and designed using the transport properties of the constituent oxides, irrespective of their strongly correlated electronic nature.