Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications
Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications
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DOI：
10.7567/jjap.53.05fp06
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发表时间：
2014-05-01
影响因子：
1.5
通讯作者：
Funaki, Tsuyoshi
中科院分区：
文献类型：
--
作者：
Umezawa, Hitoshi;Shikata, Shin-ichi;Funaki, Tsuyoshi
制备了具有厚场板和掺杂控制漂移层的大电流垂直结构金刚石肖特基势垒二极管(SBD)。制作的垂直SBD(VSBD)在250℃下实现了大于1A和300V的正向电流和阻断电压。VSBD安装在金键合导线和耐高温树脂的金属陶瓷封装上。用双脉冲方法表征了封装后的金刚石VSBD的高温开关行为。该装置的关断时间很短，开关电荷低于5 nC，即使在250摄氏度的温度下也几乎保持不变。
High-current vertically structured diamond Schottky barrier diodes (SBDs) with a thick field plate and a doping-controlled drift layer were fabricated. The fabricated vertical SBD (VSBD) realized forward currents and blocking voltages of more than 1A and 300V at 250 degrees C. The VSBD was mounted on a metal-ceramic package with a gold bonding wire and a high-temperature resistive resin. The switching behavior of the packaged diamond VSBD was characterized by a double-pulse method at elevated temperatures. The device showed a short turn-off time with a low switching charge of less than 5 nC, which remained almost constant even at 250 degrees C. (C) 2014 The Japan Society of Applied Physics