An analytic potential model for symmetric and asymmetric DG MOSFETs
An analytic potential model for symmetric and asymmetric DG MOSFETs
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DOI：
10.1109/ted.2006.872093
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发表时间：
2006-04
影响因子：
3.1
通讯作者：
Huaxin Lu;Y. Taur
中科院分区：
文献类型：
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作者：
Huaxin Lu;Y. Taur
提出了一种长沟道对称和非对称双栅MOSFET的解析势模型。该模型是严格推导出泊松方程和电流连续性方程的精确解，没有电荷片近似。通过保留适当的物理，在亚阈值区域的体积反转很好地占在模型中。得到的长沟道DG MOSFET的漏电流、端电荷和电容的解析表达式在所有工作区域都是连续的，即，线性、饱和和亚阈值，使其适合于紧凑建模。由于在整个推导过程中没有调用拟合参数，因此该模型是物理和预测性的。所有的参数公式进行了验证，二维数值模拟具有良好的协议。该模型已在SPICE 3仿真程序中实现，并通过对CMOS电路的瞬态分析验证了其可行性。
This paper presents an analytic potential model for long-channel symmetric and asymmetric double-gate (DG) MOSFETs. The model is derived rigorously from the exact solution to Poisson's and current continuity equation without the charge-sheet approximation. By preserving the proper physics, volume inversion in the subthreshold region is well accounted for in the model. The resulting analytic expressions of the drain-current, terminal charges, and capacitances for long-channel DG MOSFETs are continuous in all operation regions, i.e., linear, saturation, and subthreshold, making it suitable for compact modeling. As no fitting parameters are invoked throughout the derivation, the model is physical and predictive. All parameter formulas are validated by two-dimensional numerical simulations with excellent agreement. The model has been implemented in Simulation Program with Integrated Circuit Emphasis version 3 (SPICE3), and the feasibility is demonstrated by the transient analysis of sample CMOS circuits.