Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
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DOI：
10.1063/1.3497014
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发表时间：
2010-10-11
影响因子：
4
通讯作者：
Kessels, W. M. M.
中科院分区：
文献类型：
--
作者：
Dingemans, G.;Beyer, W.;Kessels, W. M. M.
氢在硅表面钝化的作用是实验确定的原子层沉积合成的Al 2 O3（帽）膜。通过使用SiO2和氘代Al 2 O3的叠层，我们证明了氢在400 ℃的相对低的退火温度下已经从Al 2 O3传输到下面的SiO2。这导致界面的高水平化学钝化。此外，通过在SiO2上施加薄的Al 2 O3覆盖膜，可显著提高高达800 ℃的钝化热稳定性。Al_2 O_3膜释放的氢对Si界面缺陷的钝化有积极的影响。(c)2010年美国物理学会。[doi：10.1063/1.3497014]
The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 degrees C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 degrees C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects. (c) 2010 American Institute of Physics. [doi:10.1063/1.3497014]