Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study
Atomic resolution mapping of interfacial intermixing and segregation in InAs/GaSb superlattices: A correlative study
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DOI：
10.1063/1.4794193
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发表时间：
2013-03-14
影响因子：
3.2
通讯作者：
Zuo, Jian-Min
中科院分区：
文献类型：
--
作者：
Kim, Honggyu;Meng, Yifei;Zuo, Jian-Min
We combine quantitative analyses of Z-contrast images with composition analyses employing atom probe tomography (APT) correlatively to provide a quantitative measurement of atomic scale interfacial intermixing in an InAs/GaSb superlattice (SL). Contributions from GaSb and InAs in the Z-contrast images are separated using an improved image processing technique. Correlation with high resolution APT composition analyses permits an examination of interfacial segregation of both cations and anions and their incorporation in the short period InAs/GaSb SL. Results revealed short, intermediate, and long-range intermixing of In, Ga, and Sb during molecular beam epitaxial growth and their distribution in the SL. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794193]
