Infrared laser desorption/ionization on silicon.
Infrared laser desorption/ionization on silicon.
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DOI：
10.1021/ac0112972
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发表时间：
2002-03
影响因子：
7.4
通讯作者：
Sucharita H Bhattacharya;T. J. Raiford;Kermit K. Murray
中科院分区：
文献类型：
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作者：
Sucharita H Bhattacharya;T. J. Raiford;Kermit K. Murray
利用中红外波段3微米范围内的激光器对单晶硅表面进行激光解吸/电离。分析物分子在不添加基质的情况下电离至6kda。与紫外解吸/电离多孔硅（DIOS）一样，红外激光解吸硅不会产生干扰低质量分析物分析的基质离子。然而，与UV DIOS相比，使用红外激光器电离不需要硅孔隙度或粗糙度。在2.8 ~ 3.5微米的波长范围内获得了质谱，这与氢键OH基团吸收能量一致。假设了一种基于被吸附溶剂分子解吸的机理。
Laser desorption/ionization from a single-crystal silicon surface was performed using a laser operating in the 3-microm region of the mid-infrared. Analyte molecules up to 6 kDa were ionized with no added matrix. As with ultraviolet desorption/ionization from porous silicon (DIOS), IR laser desorption from silicon does not produce matrix ions that can interfere with analysis of low-mass analytes. However, in contrast to UV DIOS, silicon porosity or roughness is not required for ionization using an IR laser. Mass spectra were obtained in the wavelength range between 2.8 and 3.5 microm, which is consistent with energy absorption by a hydrogen-bonded OH group. A mechanism based on desorption of adsorbed solvent molecules is postulated.