Structure-property relationship of Co2MnSi thin films in response to He+-irradiation
Structure-property relationship of Co2MnSi thin films in response to He+-irradiation
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DOI：
10.1038/s41598-019-39435-4
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发表时间：
2019-02-26
影响因子：
4.6
通讯作者：
Wurmehl, Sabine
中科院分区：
文献类型：
--
作者：
Hammerath, Franziska;Bali, Rantej;Wurmehl, Sabine
研究了He+离子辐照Co2MnSi Heusler薄膜的结构与性能的关系。用核磁共振和透射电子显微镜研究了晶体结构随离子注量的变化，并与相应的磁行为变化相联系。观察到结构有序性和饱和力矩的降低。具体地说，我们检测到了从高度L2(1)有序到完全A2无序结构类型的直接转变，并量化了A2结构贡献作为离子通量的函数的演化。互补的透射电子显微镜分析表明，L2(1)和A2相的空间分布表明A2无序从薄膜的上部开始。随着磁通的增加，结构退化又导致饱和磁矩减小。
We investigated the structure-property relationship of Co2MnSi Heusler thin films upon the irradiation with He+ ions. The variation of the crystal structure with increasing ion fluence has been probed using nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM), and associated with the corresponding changes of the magnetic behavior. A decrease of both the structural order and the moment in saturation is observed. Specifically, we detect a direct transition from a highly L2(1)-ordered to a fully A2-disordered structure type and quantify the evolution of the A2 structural contribution as a function of ion fluence. Complementary TEM analysis reveals a spatially-resolved distribution of the L2(1) and A2 phases showing that the A2 disorder starts at the upper part of the films. The structural degradation in turn leads to a decreasing magnetic moment in saturation in response to the increasing fluence.