Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes
Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes
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DOI：
10.1007/s00340-018-6911-3
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发表时间：
2018-02
期刊：
影响因子：
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通讯作者：
Liefeng Feng;Shupeng Wang;Yang Li;Xiufang Yang;Ding Li;Cunda Wang
中科院分区：
文献类型：
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作者：
Liefeng Feng;Shupeng Wang;Yang Li;Xiufang Yang;Ding Li;Cunda Wang
根据直接测量的表观特性和用Ac-IV方法提取的结特性以及模拟计算，证实了窄带隙和宽禁带多量子阱(MQW)激光二极管(LDs)在IdV/Di-I曲线中两个扭结之间的电流区域的“阈值区域”内的电学行为呈现相反和突变的趋势。在阈值区域，窄带隙LDS(波长为780和650 nm)的负电容和串联电阻曲线下降，而在宽禁带(波长为450和405 nm)LDS中，负电容和串联电阻曲线上升；结电压曲线在窄带隙LDS中跃升，而在宽带隙LDS中下降。我们定性地解释了这些电参数的相反变化趋势，并得出结论，不同的受激发射机制导致了这两种材料的LDS相反的变化趋势。
The opposite and abrupt change trends of the electrical behavior between narrow and wide bang-gap multi-quantum-well (MQW) laser diodes (LDs) in the ‘threshold region’, which corresponds to the current region between two kinks in theIdV/dI–Icurves, were confirmed from the apparent properties measured directly and junction properties extracted by our ac-IV method, as well as simulation calculations. In the threshold region, negative capacitance and series resistance curves in narrow bandgap LDs (wavelengths are 780 and 650 nm) drop down, while in wide-bandgap LDs (wavelengths are 450 and 405 nm), they jump up; the junction voltage curves in narrow bandgap LDs jump up, while in wide-bandgap LDs, they drop down. We qualitatively interpreted the opposite change trend of these electrical parameters, and concluded that different stimulated emission mechanisms caused this opposite change trend of LDs with these two types of materials.