Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide
Performance and Reliability of Electrowetting-on-Dielectric (EWOD) Systems Based on Tantalum Oxide
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DOI：
10.1021/acsami.7b07366
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发表时间：
2017-12-06
影响因子：
9.5
通讯作者：
Zangari, Giovanni
中科院分区：
文献类型：
--
作者：
Mibus, Marcel;Zangari, Giovanni
通过测量 Cytop/氧化钽 (TaOx) 双层的响应与施加电压的关系以及在长时间周期循环下、低于和高于对应于氧化物击穿场的阈值电压 VT 的响应，研究了 Cytop/钽氧化物 (TaOx) 双层的电润湿电介质行为。 TaOx表现出对称的固态IV特性，电子传导以肖特基、普尔·弗兰克尔发射为主；传导归因于氧空位 (6 X 10(16) cm(-3))，导致低偏压下产生大电流。电解质/金属氧化物/金属的 I-V 特性显示氧化物在 (
The electrowetting-on-dielectric behavior of Cytop/Tantalum oxide (TaOx) bilayers is studied by measuring their response vs applied voltage and under prolonged periodic cycling, below and above the threshold voltage VT corresponding to the breakdown field for the oxide. TaOx exhibits symmetric solid state I V characteristics, with electronic conduction dominated by Schottky, Poole Frenkel emission; conduction is attributed to oxygen vacancies (6 X 10(16) cm(-3)), resulting in large currents at low bias. Electrolyte/Metal Oxide/Metal' I-V characteristics show oxide degradation at (