Effect of Electrode Roughness on Electroforming in HfO 2 and Defect-Induced Moderation of Electric-Field Enhancement
Effect of Electrode Roughness on Electroforming in HfO 2 and Defect-Induced Moderation of Electric-Field Enhancement
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电极粗糙度对 HfO 2 中电铸的影响以及缺陷诱发的电场增强调节
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
R. Elliman
中科院分区：
文献类型：
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作者：
S. K. Nandi;Xinjun Liu;D. Venkatachalam;R. Elliman
在金属-绝缘体-金属器件中，例如那些寻求用于下一代电阻RAM(ReRAM)的器件，粗糙的电极降低了击穿电压。这种效应一般归因于微凸处的电场增强。作者们发现，这种增强可以通过粗糙表面附近带电缺陷的产生和迁移而迅速减弱，但发现电场增强对介电击穿的影响比仅从电极几何形状预期的要小得多。这项研究是理解电极织构在ReRAM性能中的作用的重要一步，包括获得最终性能所必需的比例效应。
In metal-insulator-metal devices, such as those sought for use in next-generation resistive RAM (ReRAM), rough electrodes reduce the breakdown voltage. This effect is generally attributed to electric-field enhancement at asperities. The authors show that such enhancement is rapidly mitigated by the generation and migration of charged defects near an asperity, but find that the effect of field enhancement on dielectric breakdown is much smaller than one would expect from electrode geometry alone. This study is a significant step in understanding the role of electrode texture in ReRAM properties, including the scaling effects essential to attaining ultimate performance.