Effect of Nitrogen Concentration on Capacitance, Density of States, Electronic Conductivity, and Morphology of N-Doped Carbon Nanotube Electrodes
Effect of Nitrogen Concentration on Capacitance, Density of States, Electronic Conductivity, and Morphology of N-Doped Carbon Nanotube Electrodes
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DOI:
10.1021/jp907160v
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发表时间:
2009-10
影响因子:
3.7
通讯作者:
Jaclyn D. Wiggins-Camacho;K. Stevenson
中科院分区:
文献类型:
--
作者:
Jaclyn D. Wiggins-Camacho;K. Stevenson
Heteroatom doping (e.g., boron and nitrogen) of graphitic carbon lattices affects various physicochemical properties of sp2 carbon materials. The influence of nitrogen doping in carbon nanotubes (N-CNTs) on their electrochemical and electrical properties such as the differential capacitance, density of states at the Fermi level (D(EF)), bulk conductivity, and work function is presented. Studies were performed on free-standing N-CNTs electrode mats to understand the intrinsic physicochemical properties of the material without relying on the secondary influence of another conductive support. N-Doping levels ranging from 0 to 7.4 atom % N were examined, and electrochemical impedance spectroscopy (EIS) was used to evaluate the differential capacitance and to estimate the effective density of states, D(EF). X-ray photoelectron spectroscopy (XPS) and Raman microscopy were used to assess the compositional and structural properties as a function of nitrogen doping. XPS N1s spectra show three principle types of ni...