Carbon nanotube thin film transistors on flexible substrates
Carbon nanotube thin film transistors on flexible substrates
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DOI：
10.1063/1.3622767
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发表时间：
2011-08-15
影响因子：
4
通讯作者：
Tulevski, George S.
中科院分区：
文献类型：
--
作者：
Chandra, Bhupesh;Park, Hongsik;Tulevski, George S.
碳纳米管薄膜晶体管（CNT - TFTs）是使用基于表面活性剂且经过纯化的碳纳米管悬浮液在柔性基底上制备的，其中半导体性碳纳米管的比例>95%。这些晶体管由局部底栅结构组成，以氧化铝作为栅极电介质。这些器件展现出高的导通电流密度（0.1微安/微米）和开关比（类似于10⁵），迁移率值在10 - 35平方厘米/伏秒的范围内。一个详细的数值模型被用于理解晶体管的性能及其对诸如晶体管沟道长度、碳纳米管密度和纯度等器件参数的依赖性。（C）2011美国物理学会。[doi:10.1063/1.3622767]
Carbon nanotube thin film transistors (CNT-TFTs) are fabricated on flexible substrates using purified, surfactant-based CNT suspensions, with >95% semiconducting CNT fraction. The TFTs are made up of local bottom-gated structures with aluminum oxide as the gate dielectric. The devices exhibit high ON current densities (0.1 mu A/mu m) and on-off ratios (similar to 10(5)) with mobility values ranging from 10-35 cm(2)/Vs. A detailed numerical model is used to understand the TFT performance and its dependence on device parameters such as TFT channel length, CNT density, and purity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3622767]