SiV0 centres in diamond: effect of isotopic substitution in carbon and silicon
SiV0 centres in diamond: effect of isotopic substitution in carbon and silicon
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DOI：
10.1098/rsta.2023.0170
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发表时间：
2024-01-22
期刊：
影响因子：
5
通讯作者：
Sedov, Vadim S.
中科院分区：
文献类型：
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作者：
Boldyrev, Kirill N.;Sektarov, Eduard S.;Sedov, Vadim S.
中性电荷硅空位缺陷（SiV0）是金刚石中的色中心，自旋为S = 1，在946 nm处具有零声子线（ZPL）和长自旋相干性，这使其成为量子网络应用的有希望的候选国。为了使这些色中心发挥正确的作用，它们必须具有相同的光学特性。然而，在实践中，有影响每个中心的因素。其中一个原因是金刚石晶格中的碳原子和掺杂剂中的硅原子的同位素组成不均匀。在这项工作中，我们研究了cvd生长的同位素富集的C-12和C-13钻石外延层的SiV0中心的同位素位移，以及天然同位素组成但只掺杂一种Si同位素（Si-28， Si-29和Si-30）的钻石。探测到的C-12/C-13对的位移为1.60 meV， Si-28/Si-29和Si-29/Si-30对的位移为0.33 meV，这与之前获得的带负电荷的硅空位（SiV-）的同位素位移值接近，这表明SiV色心的这两种电荷态与环境的相互作用模型相似。
The neutrally charged silicon-vacancy defect (SiV0) is a colour centre in diamond with spin S = 1, a zero-phonon line (ZPL) at 946 nm and long spin coherence, which makes it a promising candidate for quantum network applications. For the proper performance of such colour centres, all of them must have identical optical characteristics. However, in practice, there are factors that influence each individual centre. One of these factors is non-uniform isotope composition for both carbon atoms in diamond lattice and silicon atoms of dopant. In this work, we studied the isotopic shifts of SiV0 centres for CVD-grown epitaxial layers of isotopically enriched C-12 and C-13 diamonds, as well as for diamond with natural isotope composition but doped only with one isotope of Si (Si-28, Si-29 and Si-30). The detected shift was 1.60 meV for C-12/C-13 couple and 0.33 meV for Si-28/Si-29 and Si-29/Si-30 couples, which are close to the previously obtained values of the isotopic shift for the negatively charged silicon vacancy (SiV-), which indicates a similar model of interaction with the environment for these two charge states of the SiV colour centres.