High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate
High-Performance Low-Leakage-Current AlN/GaN HEMTs Grown on Silicon Substrate
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DOI：
10.1109/led.2011.2138674
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发表时间：
2011-05
影响因子：
4.9
通讯作者：
F. Medjdoub;M. Zegaoui;D. Ducatteau;N. Rolland;P. Rolland
中科院分区：
文献类型：
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作者：
F. Medjdoub;M. Zegaoui;D. Ducatteau;N. Rolland;P. Rolland
在这封信中，超薄势垒AlN/GaN高电子迁移率晶体管（HEMT）覆盖原位金属有机化学气相沉积生长的SiN已成功地制作在100毫米的Si衬底上。输出电流密度超过2 A/mm，这代表了，据我们所知，有史以来最高的值实现的GaN-on-Si HEMT。这是由于优化的AlN/GaN异质结构的高2DEG密度。尽管势垒为6 nm，但在不使用通常引起可靠性问题的栅极电介质的情况下获得约10 μA/mm的低栅极和漏极漏电流。此外，高纵横比（栅极长度Lg/栅极到沟道距离）和低RF损耗（在缓冲层/Si衬底界面处）反映在优异的RF性能中。当栅长为0.2 μm时，器件的电流增益非本征截止频率fT和最大振荡频率fmax分别为52和102 GHz，fT·Lg乘积与目前报道的GaN-on-Si HEMT器件相当。
In this letter, ultrathin-barrier AlN/GaN high-electron mobility transistors (HEMTs) capped with in situ metal-organic-chemical-vapor-deposition-grown SiN have been successfully fabricated on 100-mm Si substrates. Output current density exceeding 2 A/mm has been reached, which represents, to the best of our knowledge, the highest value ever achieved for GaN-on-Si HEMTs. This results from the high 2DEG density of the optimized AlN/GaN heterostructure. Despite the ultrathin barrier of 6 nm, low gate and drain leakage currents of about 10 μA/mm are obtained without the use of a gate dielectric that generally induces reliability issues. Furthermore, the high aspect ratio (gate length Lg/gate-to-channel distance) and low RF losses (at the buffer/Si substrate interface) are reflected in excellent RF performances. The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 52 and 102 GHz with a 0.2- μm gate length, respectively, resulting in an fT·Lg product as high as the reported state-of-the-art GaN-on-Si HEMTs.