High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi
High electron mobility and large magnetoresistance in the half-Heusler semimetal LuPtBi
复制标题
半霍斯勒半金属 LuPtBi 具有高电子迁移率和大磁阻
DOI：
10.1103/physrevb.92.235134
复制
发表时间：
2015-12-18
影响因子：
3.7
通讯作者：
Zhang, Xi-xiang
中科院分区：
文献类型：
--
作者：
Hou, Zhipeng;Wang, Wenhong;Zhang, Xi-xiang
具有高载流子迁移率和大磁电阻效应的材料在未来高性能磁电器件中具有潜在的应用前景，因此近年来受到广泛关注。在这里，我们报告了一个电子空穴补偿的半Heusler半金属LuPtBi，表现出极高的电子迁移率高达79 000 cm（2）/Vs与非饱和的正MR高达3200%在2 K。值得注意的是，在300 K的迁移率超过10 500 cm（2）/Vs，这是迄今为止在三维块体材料中报道的最高值之一。在低温下观察到的干净的Shubnikov-de哈斯量子振荡和第一性原理计算一起表明，高电子迁移率是由于晶体的独特能带结构引起的相当小的有效载流子质量。我们的研究结果提供了一种不同的方法，通过设计一个适当的费米表面拓扑结构，从简单的电子空穴补偿半金属找到大的，高迁移率的MR材料。
Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magnetoelectric devices. Here, we report on an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79 000 cm(2)/Vs with a nonsaturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10 500 cm(2)/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our findings provide a different approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.