A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption
A Novel Lateral Phase-Change Random Access Memory Characterized by Ultra Low Reset Current and Power Consumption
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DOI：
10.1143/jjap.45.l726
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发表时间：
2006-07
影响因子：
1.5
通讯作者：
Y. Yin;A. Miyachi;D. Niida;H. Sone;S. Hosaka
中科院分区：
文献类型：
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作者：
Y. Yin;A. Miyachi;D. Niida;H. Sone;S. Hosaka
我们制作并研究了单层相变随机存取存储器（PRAM），它具有一个由两个电阻率相对较低的宽TiN电极连接的受限Ge_2Sb_2Te_5（GST）沟道。其复位操作的开关电流可低至4-20 µA，比传统底部接触PRAM单元的开关电流低一个或两个数量级。其复位操作的相应开关功率约为2-4 µW。这种超低复位电流和功率的原因可能是焦耳加热主要发生在GST沟道中，而不是传统PRAM单元中的电阻加热器。
We have fabricated and studied single lateral phase-change random-access-memory (PRAM), which has a confined Ge2Sb2Te5 (GST) channel connected by two wide TiN electrodes of relatively low resistivity. Its switching current for Reset operation could be as low as 4–20 µA, about one or two orders of magnitude lower than that of the conventional bottom contact PRAM cell. Its corresponding switching power for Reset operation is about 2–4 µW. The reason for such ultra low Reset current and power could be that Joule heating occurred mainly in the GST channel, instead of the resistive heater in the conventional PRAM cell.