Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever
Photovoltage Mapping on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy with Piezoresistive Cantilever
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使用压阻悬臂梁开尔文探针力显微镜对多晶硅太阳能电池进行光电压测绘
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发表时间：
2007
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通讯作者：
Takuji Takahashi
中科院分区：
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作者：
M. Takihara;Takatoshi Igarashi;T. Ujihara;Takuji Takahashi
用开尔文探针力显微镜（KFM）研究了多晶硅太阳电池在光照下的光伏特性。在我们的KFM系统中，采用了压阻悬臂梁和一种新的反馈电位测量方法，实现了在黑暗和光照条件下的电位的准确测量。结果，我们观察到在晶界周围的光电压降和在多晶硅太阳能电池上的两个不同晶粒之间的光电压的微小差异。
The photovoltage on a polycrystalline silicon solar cell has been investigated by Kelvin probe force microscopy (KFM) under light illumination. In our KFM system, a piezoresistive cantilever and a new feedback method for potential determination were adopted to realize an accurate measurement of potential under both dark condition and light illumination. As a result, we observed a photovoltage drop around the grain boundary and a slight difference in photovoltage between two different grains on the polycrystalline silicon solar cell.