Deposition of ru thin films from supercritical carbon dioxide fluids
Deposition of ru thin films from supercritical carbon dioxide fluids
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DOI：
10.1143/jjap.44.5799
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发表时间：
2005-07-01
期刊：
影响因子：
--
通讯作者：
Kondoh, E
中科院分区：
文献类型：
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作者：
Kondoh, E
Ru在ULSI电容器电极和最近作为阻止铜扩散的阻挡金属方面都有很大的应用价值。超临界CO_2薄膜沉积作为一种新的沉积技术，具有纳米穿透能力，为开发新的沉积化学方法提供了可能性，受到了人们的广泛关注。然而，关于这项技术的论文很少发表。本文首先介绍了氢气还原法制备Ru薄膜的沉积特性。研究发现，当采用H-2还原化学方法时，Ru膜只在导电表面生长。这些薄膜对于某些特定的应用可能是有益的；然而，对于一般的沉积技术来说，它们并不是很受欢迎。其次，我们报道了当使用氧化化学时，Ru膜，实际上是含氧的Ru膜，生长在介电/非导电表面上。首次采用O-3作为氧化剂，从超临界流体中沉积薄膜。O-3的使用促进了薄膜的异相形核，增加了薄膜中的氧量。含氧的Ru通过超临界CO2的另一次还原进行还原。
Ruthenium has been of interest for application in ULSI capacitor electrodes and more recently as a barrier metal against Cu diffusion. Thin-film deposition from supercritical CO2 has gained particular attention as a new deposition technique that provides nano-penetration capability and a possibility of developing new deposition chemistries. However, few papers have been published on this technique. In this article, first, the deposition characteristics of Ru thin films using H-2 reduction chemistry were described. It was found that Ru films grow only on conductive surfaces when H-2 reduction chemistry was employed. These films can be beneficial for some specific applications; however they are not very much favored for general deposition technology. Second, we report that Ru films, oxygen-containing Ru films in fact, grew on dielectric/nonconductive surfaces when oxidative chemistry was used. O-3 was used as an oxidant for thin film deposition from supercritical fluids for the first time. The use of O-3 promotes heterogenous nucleation and increases the amount of oxygen in the films. Oxygen-containing Ru was reduced by another reduction run using supercritical CO2.