Anatomy of Carrier Backscattering in Silicon Nanowire Transistors
Anatomy of Carrier Backscattering in Silicon Nanowire Transistors
复制标题
硅纳米线晶体管中载流子反向散射的剖析
DOI：
10.1109/iwce.2009.5091085
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
M. Fischetti
中科院分区：
文献类型：
--
作者：
Seonghoon Jin;T. Tang;M. Fischetti
我们利用多子带Boltzmann输运方程的数值解研究了硅纳米线晶体管中载流子背向散射的物理过程，其中包括声子和谷间声子、表面粗糙度和电离杂质的相关散射机制，其中考虑了子带内和子带间以及弹性和非弹性跃迁。将虚拟源模型中的几个假设的有效性与数值解进行了对比。我们发现，在没有自洽模拟的情况下，散射过程使得在虚拟源处对宏观量进行建模变得困难。
We study the physics of carrier backscattering in silicon nanowire transistors by using the numerical solution of the multisubband Boltzmann transport equation, where relevant scattering mechanisms by acoustic and intervalley phonons, surface roughness, and ionized impurities are included, accounting for intrasubband and intersubband, and elastic and inelastic transitions. The validity of several assumptions in the virtual source model is checked against the numerical solution. We have found that scattering processes make it difficult to model the macroscopic quantities at the virtual source without self-consistent simulations.