Mapping the depleted area of silicon diodes using a micro-focused X-ray beam
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam
复制标题
使用微聚焦 X 射线束绘制硅二极管的耗尽区域图
DOI：
10.1088/1748-0221/14/03/p03024
复制
发表时间：
2018
影响因子：
1.3
通讯作者：
Y. Unno
中科院分区：
文献类型：
--
作者：
L. Poley;A. Blue;I. Bloch;C. Buttar;V. Fadeyev;J. Fernandez;C. Fleta;J. Hacker;C. Llácer;M. Miñano;M. Renzmann;E. Rossi;C. Sawyer;D. Sperlich;M. Stegler;M. Ullán;Y. Unno
对于CERN ATLAS探测器的第二阶段升级，当前的ATLAS内部探测器将被ATLAS内部跟踪器（ITk）取代。ITk将是一个全硅探测器，由一个像素跟踪器和一个条带跟踪器组成。ITk条带跟踪器的传感器需要在高达−500 V的偏置电压下具有低漏电流，以保持低噪声和低功耗。为了使传感器漏电流最小化，特别是在ATLAS探测器内部的高辐射环境中，传感器预计将在低温下工作，并由具有几kΩ·cm的高体电阻率的晶片制造。模拟显示，具有高体电阻率的传感器内部的电场向传感器边缘延伸，这可能导致窄切割边缘的表面电流增加。为了绘制具有高体电阻率的偏置硅传感器内部的电场，在Diamond Light Source（迪科，英国）处用单色微聚焦X射线束研究来自ATLAS硅条传感器原型晶片的三个二极管。对于所有正在调查的设备，二极管内的电场被映射，并研究其对所施加的偏置电压的依赖性。
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of −500 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ·cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.
全尺寸 ATLAS12 传感器的详细研究
DOI：
10.1016/j.nima.2016.03.042
发表时间：
2016
期刊：
Accelerators, Spectrometers, Detectors and Associated Equipment
影响因子：
--
作者：
Hommels L
通讯作者：
Hommels L