Electric field tunable anisotropic magnetoresistance effect in an epitaxial Co2FeSi/BaTiO3 interfacial multiferroic system
Electric field tunable anisotropic magnetoresistance effect in an epitaxial Co2FeSi/BaTiO3 interfacial multiferroic system
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DOI：
10.1103/physrevmaterials.5.014412
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发表时间：
2021-01
影响因子：
3.4
通讯作者：
S. Yamada;Y. Teramoto;D. Matsumi;D. Kepaptsoglou;I. Azaceta;T. Murata;K. Kudo;V. Lazarov;T. Taniyama;K. Hamaya
中科院分区：
文献类型：
--
作者：
S. Yamada;Y. Teramoto;D. Matsumi;D. Kepaptsoglou;I. Azaceta;T. Murata;K. Kudo;V. Lazarov;T. Taniyama;K. Hamaya
We study magnetic and magnetotransport properties of an epitaxial interfacial multiferroic system consisting of a ferromagnetic Heusler-alloy ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ and a ferroelectric-oxide $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}$. $L{2}_{1}$-ordered ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ epilayers on $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ show an in-plane uniaxial magnetic anisotropy with strong temperature dependence, induced by the presence of the magnetoelastic effect via the spin-orbit interaction at the ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}/\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ interface. In the ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ Hall-bar devices, the anisotropic magnetoresistance (AMR) hysteretic curves depending on in-plane magnetization reversal processes on the $a$ and $c$ domains of $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ are clearly observed at room temperature. Notably, the magnitude of the AMR ratio (%) for ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ Hall-bar devices can be tuned through the $a\ensuremath{-}c$ domain wall motion of $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ by applying electric fields. We propose that the tunable AMR effect is associated with the modulation of the spin-orbit interaction, exchange interaction, and/or the electronic band structure near the Fermi level by applying electric fields in the epitaxial ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}/\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ interfacial multiferroic system.
We study magnetic and magnetotransport properties of an epitaxial interfacial multiferroic system consisting of a ferromagnetic Heusler-alloy ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ and a ferroelectric-oxide $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}$. $L{2}_{1}$-ordered ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ epilayers on $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ show an in-plane uniaxial magnetic anisotropy with strong temperature dependence, induced by the presence of the magnetoelastic effect via the spin-orbit interaction at the ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}/\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ interface. In the ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ Hall-bar devices, the anisotropic magnetoresistance (AMR) hysteretic curves depending on in-plane magnetization reversal processes on the $a$ and $c$ domains of $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ are clearly observed at room temperature. Notably, the magnitude of the AMR ratio (%) for ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}$ Hall-bar devices can be tuned through the $a\ensuremath{-}c$ domain wall motion of $\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ by applying electric fields. We propose that the tunable AMR effect is associated with the modulation of the spin-orbit interaction, exchange interaction, and/or the electronic band structure near the Fermi level by applying electric fields in the epitaxial ${\mathrm{Co}}_{2}\mathrm{Fe}\mathrm{Si}/\mathrm{Ba}\mathrm{Ti}{\mathrm{O}}_{3}(001)$ interfacial multiferroic system.