Microchannel Wetting for Controllable Patterning and Alignment of Silver Nanowire with High Resolution.

Microchannel Wetting for Controllable Patterning and Alignment of Silver Nanowire with High Resolution.
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DOI:
10.1021/acsami.5b06370
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发表时间:
2015-09
影响因子:
9.5
通讯作者:
Bo‐Ru Yang;W. Cao;Gui-Shi Liu;Hui-Jiuan Chen;Yong‐Young Noh;T. Minari;Hsiang-Chi Hsiao;Chia-Yu Lee;H. Shieh;Chuan Liu
Bo‐Ru Yang;W. Cao;Gui-Shi Liu;Hui-Jiuan Chen;Yong‐Young Noh;T. Minari;Hsiang-Chi Hsiao;Chia-Yu Lee;H. Shieh;Chuan Liu
中科院分区:
材料科学2区
文献类型:
--
作者:
Bo‐Ru Yang;W. Cao;Gui-Shi Liu;Hui-Jiuan Chen;Yong‐Young Noh;T. Minari;Hsiang-Chi Hsiao;Chia-Yu Lee;H. Shieh;Chuan Liu

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导电纳米线的图案化和对准对于各种应用中的良好电隔离和高导电性是必不可少的。本文提出了一种简单的自下而上的添加剂技术,通过控制分散液在微通道中的润湿来图案化和排列银纳米线(AgNW)。通过用含氟聚合物(Cytop)和SiO2形成低至8 μm的疏水/亲水微图案,具有优化表面张力和粘度的AgNW水分散体自组装成微滴,然后干燥形成各向异性AgNW网络。通过改变微通道的宽度,可以很好地控制以半高宽(FWHM)表征的取向度,使其在39.8° ~ 84.1°范围内变化。通过对银纳米线排列的统计分析,提出并验证了一种机制,并提出了一个静态模型来指导一般纳米线的图案化。由于形成了有效的载流子传导渗流路径,该对准将AgNW网络的电阻率降低了5倍。
Patterning and alignment of conductive nanowires are essential for good electrical isolation and high conductivity in various applications. Herein a facile bottom-up, additive technique is developed to pattern and align silver nanowires (AgNWs) by manipulating wetting of dispersions in microchannels. By forming hydrophobic/hydrophilic micropatterns down to 8 μm with fluoropolymer (Cytop) and SiO2, the aqueous AgNW dispersions with the optimized surface tension and viscosity self-assemble into microdroplets and then dry to form anisotropic AgNW networks. The alignment degree characterized by the full width at half-maximum (FWHM) can be well-controlled from 39.8° to 84.1° by changing the width of microchannels. A mechanism is proposed and validated by statistical analysis on AgNW alignment, and a static model is proposed to guide the patterning of general NWs. The alignment reduced well the electrical resistivity of AgNW networks by a factor of 5 because of the formation of efficient percolation path for carrier conduction.